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* Welcome To Langasite Single  Crystal *
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LGS (La3Ga5SiO14)

 Langasite crystal e.g. La3Ga5SiO14 was found excellent for BAW and SAW devices due to its excellent acoustic characteristics. It has 3 ~4 times larger electro-mechanical coupling coefficient than quartz, better frequency-temperature characteristics and smaller equivalent series resistance.

Physical Properties:

Crystal Structure

trigonal system, group 33. a= 8.1783 c = 5.1014

Growth Method

Czochralski

Hardness

6.6 Mohs

Density

5.754 g/cm3

Melt Point

1470 C ( phase transition point: N/A)

Thermal expansion (x10-6/ C)

a11: 5.10  a33: 3.61

Acoustic velocity, SAW
Frequency constant, BAW Piezoelectric coupling ,

2400 ( m/sec )
1380 ( kHz/mm )
K2 (%) BAW: 2.21 SAW: 0.3

Inclusion

N0

Standard Wafer Specifications:

Orientation

Orientation specified by customer. 0.5

Polished surface

EPI polished on one side or two sides to Ra < 10
Working Area: Wafer diameter minus 2 mm
BOW: < 10μm for 2 wafer
No chips out on working area. In the edge, chip width < 0.5 mm
Pit and scratches: < 3 per wafer or < 20 per 100 wafers

Standard Thickness

0.5 mm 0.05mm TTV < 5μm

Standard Diameter

Ф35 ( mm )

Special size and orientation are available upon request

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