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* Welcome To Nd:GeVO4 Crystal *
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Nd:GeVO4

Nd:GdVO4, grown with Czochralski method, is a promising laser crystal for diode pumped lasers. Similar to Nd:YVO4, It exhibits high absorption and large emission cross section. In fact, Nd:GdVO4 has a 7-times higher absorption cross section at 808nm and a 3-times larger emission cross section at 1.06m than those of Nd:YAG. In addition, Nd:GdVO44has much high thermal conductivity compared to Nd:YVO4. In each case of cw laser performance at 1.06m and 1.34m and intracavity doubling with KTP and LBO, Nd:GdVO4 has a high slope efficiency or optical conversion efficiency compared to Nd:YVO4.

Physical Properties:

Nd3+ Concentration

1.0 0.1at.%

Structure

Zircon Tetragonal, space group D4h-I4/amd, a=b=7.212, c=6.350

Space Group

I41/amd

Density

5.48g/cm3

Mohs hardness

4.6-5

Thermal Conductivity

 11.7W/(mxK), <110>

Optical Properties:

Lasing Transition

4F3/2 4I11/2

Lasing Wavelength

1062.9nm

Emission Cross Section, (E c, at 1064 nm)

7.6x10-19cm2

Absorption Cross Section, (E c, at 808 nm)

4.9x10-19cm2

Linewidth

3 nm

Relaxation Time of Terminal Lasing Level

100ms

Absorption Coefficient, (E c, at 808 nm)

74cm-1

In comparison with similar laser crystals:

 

Nd:YVO4

Nd:GdVO4

Nd:YAG

Laser wavelength

1064.3nm

1062.9 nm

1064.2nm

1342.0 nm

~1340 nm

1338.2 nm

Emission bandwidth

0.8 nm

No data

0.45 nm

Effective laser cross section @ 1064 nm

15.6 x 10-19 cm-2

7.6 x 10-19cm-2

6.5 x 10-19 cm-2

Polarization

Parallel to c-axis

Parallel to c-axis

unpolarized

Radioactive lifetime (1%Nd dopant)

~ 100 s

~ 95 s

230 s

Pump wavelength

808.5 nm

808.4 nm

807.5 nm

Peak pump absorption (1%Nd dopant)

~ 41 cm-1

~ 57 cm-1

 

Thermal conductivity

5.1W/mK

11.7W/mK

14W/mK

Nd concentration range

0.1 - 3.0%

0.1 - 3.0%

0.1 - 2.0%

Specifications:

Wavefront Distortion

< l/8 at 633 nm

Scattering

invisible, probed with a He-Ne laser

Dimensional tolerance

+0.1/-0.1 mm

Orientation tolerance

+/-0.5

Surface quality

10/5 S/D per MIL-O-13830A

Flatness

l/10 at 633 nm

Clear Aperture

> Central 90%

Parallelism

< 10 arc sec.

HR/AR Coating: S1: HR@1064&532nm HT@808nm  S2: AR@1064&532nm

AR/AR Coating: S1: AR@1064nm&532nm HT@808nm S2: AR@1064&532nm

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